today I learned that we (as a civilization) now can put 16 silicon flash dice into a single 700µm microSD card on a commercial scale https://www.ose.com.tw/en/ic-services/memory-product-package/microsdsd

[whitequark@social.treehouse.systems]

@azonenberg yep! Samsung got up to 400 layers last year

[whitequark@social.treehouse.systems]

@attie no, 3D NAND is having (up to 400 in recent flash) layers of NAND cells in each die

[azonenberg@ioc.exchange]

@whitequark the last one i threw in the fib was "only" 176 iirc

[azonenberg@ioc.exchange]

@whitequark also looking at that diagram it seems like the 16 die stack is actually two 8 die onfi channels on top of each other mirrored with one coming out the left and one out the right

[ricci@discuss.systems]

@whitequark now if we'd only build flash for a purpose other than storing content that's been stolen by our AI overlords

[attie@hachyderm.io]

@whitequark Oh, intriguing - thanks!

[0xc01dc0ffee@bytearray.eu]

@whitequark @azonenberg No fucking way, how are those even economical to manufacture?

[azonenberg@ioc.exchange]

@0xC01DC0FFEE @whitequark V-NAND is crazy. Basically deposit alternating layers of a couple of materials then drill through the whole stack and you get a vertical abacus-shaped string of hundreds of flash bits

[whitequark@social.treehouse.systems]

@azonenberg @0xC01DC0FFEE ohhhhhh.

[azonenberg@ioc.exchange]

@whitequark @0xC01DC0FFEE the transistor channel is vertical polysilicon deposited into a hole that looks kinda like a dram capacitor, except it's ringed by ONO charge trap layers then more poly for the wordlines IIRC